Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroshi Takeno0
Date of Patent
June 12, 2007
Patent Application Number
10501672
Date Filed
January 17, 2003
Patent Primary Examiner
Patent abstract
The present invention provides a silicon epitaxial wafer having an excellent IG capability all over the radial direction thereof and a process for manufacturing the same. The present invention is directed to a silicon epitaxial wafer having an excellent gettering capability all over the radial direction thereof, wherein density of oxide precipitates detectable in the interior of a silicon single crystal substrate after epitaxial growth is 1×109/cm3 or higher at any position in the radial direction.
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