Patent 7229903 was granted and assigned to Freescale Semiconductor on June, 2007 by the United States Patent and Trademark Office.
A semiconductor structure includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer over the third semiconductor layer. A first conductive portion is coupled to the first semiconductor layer, and a second conductive portion is formed over the first semiconductor layer.