Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kimihiro Kawagoe0
Date of Patent
June 12, 2007
0Patent Application Number
104748080
Date Filed
April 8, 2002
0Patent Primary Examiner
Patent abstract
In a gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer made of a p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity, a first cap layer, made of a gallium nitride semiconductor that includes n-type impurity of lower concentration than that of said active layer and p-type impurity of lower concentration than that of said p-type cladding layer, and a second cap layer made p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity are stacked one on another between said active layer and said p-type cladding layer.
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