US Patent 7230311 Silicon substrate having an insulating layer

A silicon substrate includes plural partial areas defined on the silicon substrate such that adjacent partial areas are orientated in different directions. The plural partial areas define an insulating layer that extends from a surface of the silicon subtrate into the silicon substrate. Each of the plural partial areas includes first regions that contain silicon dioxide formed by oxidation of silicon in the silicon substrate, and second regions that contain silicon dioxide deposited onto the silicon substrate. The first regions and the second regions are oriented in a substantially same direction and are arranged side-by-side and alternately such that two first regions do not border and two second regions do not border.