US Patent 7230812 Predictive applications for devices with thin dielectric regions

It is possible to predict with acceptable accuracy the time to failure of a device having a thin gate dielectric in a field effect transistor. Such prediction is based on the realization that for such thin dielectric multiple dielectric breakdown occurs before device failure ensues and that measurement of the device quiescent current flow provides the information necessary for such prediction. The ability to make reliable prediction allows improvement of device design, manufacture, and use.