Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Nga-Ching Wong0
Date of Patent
June 19, 2007
0Patent Application Number
104313210
Date Filed
May 6, 2003
0Patent Primary Examiner
Patent abstract
The present invention provides a method of fabricating a doped semiconductor region comprising selectively implanting a first impurity to form a shallow heavily doped region. The method further comprises selectively implanting the first impurity to also form a deep more heavily doped region, disposed laterally within the shallow heavily doped region and vertically within and below the shallow heavily doped region. In an optional feature of the present invention, the method further comprises selectively implanting a second impurity, wherein the doping profile of the deep more heavily doped region is graded.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
