US Patent 7234476 Method of cleaning CVD equipment processing chamber

A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2 gas and an inert gas are used as the cleaning gas. A concentration of the F2 gas is 10% or higher. The F2 gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2 gas cylinder by diluting F2 gas at a given concentration by an inert gas.