US Patent 7235501 Lanthanum hafnium oxide dielectrics
Patent 7235501 was granted and assigned to Micron Technology on June, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Kie Y. Ahn0
Leonard Forbes0
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Patent abstract
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is formed as a structure of one or more monolayers, and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
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US Patent 07235501 Lanthanum hafnium oxide dielectrics US Patent 7235501 Lanthanum hafnium oxide dielectrics
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Patent Number
07235501
Patent Number
7235501
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Official Website
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US Patent 07235501 Lanthanum hafnium oxide dielectrics
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Is a
Current assignee
Patent jurisdiction
Patent number
07235501
Date of patent
June 26, 2007
Patent application number
11010529
Date Filed
December 13, 2004
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