US Patent 7235825 IGBT with injection regions between MOSFET cells
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Patent Inventor Names
Bruno Charles Nadd0
Daniel M. Kinzer0
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Patent abstract
A cellular MOSgated device of planar or trench topology has base injection regions formed between pairs of cells to inject minority carriers to modulate the resistivity of the drift region.
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US Patent 07235825 IGBT with injection regions between MOSFET cells US Patent 7235825 IGBT with injection regions between MOSFET cells
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Patent Number
072358250
Patent Number
72358250
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Official Website
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Patent Jurisdiction
Patent Number
072358250
Date of Patent
June 26, 2007
0Patent Application Number
114074890
Date Filed
April 20, 2006
0Official Website
Patent Primary Examiner
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US Patent 07235825 IGBT with injection regions between MOSFET cells
Infobox
Is a
Patent jurisdiction
Patent number
07235825
Date of patent
June 26, 2007
Patent application number
11407489
Date Filed
April 20, 2006
Patent primary examiner
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