Patent attributes
An image sensor and a manufacturing method thereof are provided. The image sensor includes a plurality of sensors, an inter-layer dielectric layer formed over the sensors, a first inter-metal dielectric layer formed over the inter-layer dielectric layer, and a plurality of first via walls formed in the first inter-metal dielectric layer, wherein each of the first via walls is formed around each of the sensors. In addition, the image sensor further includes a second inter-metal dielectric layer formed over the first inter-metal dielectric layer and a plurality of second via walls formed in the second inter-metal dielectric layer, wherein each of the second via walls is formed around each of the sensors. Therefore, the light leakage between different pixels and the problem of crosstalk are solved, and the spatial resolution and the photo sensitivity of the image sensor are enhanced.
