US Patent 7242061 Semiconductor device

The invention provides semiconductor devices having an output circuit in which transistors do not fail to achieve their original capability, and electrostatic breakdown is difficult to occur. A semiconductor device is equipped with a semiconductor substrate, an element isolation region formed on the semiconductor substrate, a first impurity diffusion region that is formed in the semiconductor substrate and surrounds the element isolation region, a second impurity diffusion region that is formed in the semiconductor substrate, a first wiring electrode and a second wiring electrode that are electrically connected to the first impurity diffusion region on both sides of the element isolation region, an output terminal that outputs signals to outside, a wiring that electrically connects the first wiring electrode and the second wiring electrode to the output terminal, and a third wiring electrode and a fourth wiring electrode that are electrically connected to the second impurity diffusion region corresponding to the first and second wiring electrodes.