Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 10, 2007
Patent Application Number
10810837
Date Filed
March 29, 2004
Patent Primary Examiner
Patent abstract
In a semiconductor device in which the gate electrode of a MISFET formed on a semiconductor substrate is electrically connected to a well region under the channel of the MISFET, the MISFET is formed in an island-shaped element region formed on the semiconductor substrate, and electrical connection between the gate electrode of the MISFET and the well region in the semiconductor substrate is done on the side surface of the island-shaped element region.
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