US Patent 7244964 Light emitting device
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Patent abstract
An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the opposite conduction type is larger than the bandgap of the light emitting layer and is smaller than the bandgap of the p-type cladding layer.
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US Patent 07244964 Light emitting device US Patent 7244964 Light emitting device
Infobox
Patent Number
0724496400
Patent Number
724496400
Edits on 23 Mar, 2023
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
072449640
Date of Patent
July 17, 2007
0Patent Application Number
109238300
Date Filed
August 24, 2004
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
072449640
Date of Patent
July 17, 2007
0Patent Application Number
109238300
Date Filed
August 24, 2004
0Official Website
Patent Primary Examiner
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US Patent 07244964 Light emitting device
Infobox
Is a
Patent jurisdiction
Patent number
07244964
Date of patent
July 17, 2007
Patent application number
10923830
Date Filed
August 24, 2004
Patent primary examiner
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