Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Atsushi Yagishita0
Date of Patent
July 24, 2007
0Patent Application Number
111163280
Date Filed
April 28, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor device comprises an island shaped channel layer formed on a substrate, the channel later being composed of a semiconductor material, a gate insulation film formed on the channel layer, a gate electrode formed on the gate insulation film, an insulation film formed on both side faces opposite to one direction of the channel layer, a source electrode and a drain electrode made of a metal material and formed on a side face of the insulation layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
