Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shinichi Sonetaka0
Yasuyuki Toyoda0
Date of Patent
July 24, 2007
0Patent Application Number
109482640
Date Filed
September 24, 2004
0Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semiconductor substrate, an intrinsic base region having a junction surface with the collector layer and made of a second semiconductor of a second conductive type, and an emitter region having a junction surface with the intrinsic base region and made of a third semiconductor of the first conductive type. A periphery of the intrinsic base region is surrounded by an insulating region extending from the collector layer to the semiconductor substrate.
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