US Patent 7250247 Photolithographic structures using multiple anti-reflecting coatings
Patent 7250247 was granted and assigned to Micron Technology on July, 2007 by the United States Patent and Trademark Office.
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A method for fabricating an integrated circuit using a photo-lithographic process includes the steps of placing at least two anti-reflective coating layers between a reflective surface and another material. The indices of refraction, absorptions, and thicknesses of the at least two anti-reflective coating layers are chosen such that the amplitudes and phase differences of radiation reflected from the anti-reflective coating layers, as well as any other reflective surfaces below the anti-reflective coating layers, mutually cancel when combined. The invention may be practiced using more than two layers of anti-reflective coating. Multiple layers of anti-reflective coating may be used below an inter-level dielectric, in which case they may serve the additional purpose of functioning as an etch-stop.
US Patent 07250247 Photolithographic structures using multiple anti-reflecting coatings US Patent 7250247 Photolithographic structures using multiple anti-reflecting coatings
US Patent 07250247 Photolithographic structures using multiple anti-reflecting coatings
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