Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ji-young Kim0
Date of Patent
July 31, 2007
0Patent Application Number
106990470
Date Filed
October 30, 2003
0Patent Primary Examiner
Patent abstract
A MOSFET having a recessed channel and a method of fabricating the same. The critical dimension (CD) of a recessed trench defining the recessed channel in a semiconductor substrate is greater than the CD of the gate electrode disposed on the semiconductor substrate. As a result, the misalignment margin for a photolithographic process used to form the gate electrodes can be increased, and both overlap capacitance and gate induced drain leakage (GIDL) can be reduced.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
