US Patent 7250631 Semiconductor laser having protruding portion

A semiconductor laser device including: semiconductor layers including an n-type semiconductor layer, an active layer and a p-type semiconductor layer, the semiconductor layers having a stripe-shaped waveguide region formed therein; end face protective film formed on the end face of the semiconductor layer that is substantially perpendicular to the waveguide region; wherein a p-side protruding portion is formed in the vicinity of the end portion of a p-electrode or n-electrode.