Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 7, 2007
Patent Application Number
11142931
Date Filed
June 2, 2005
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a thin film transistor comprising a deposition procedure of a microcrystal material layer and performing a plasma treatment procedure. The deposition procedure and the plasma treatment procedure are repeated. A buffer layer is thus formed on the gate electrode.
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