Patent attributes
A manufacturing method for a CMOS semiconductor device in which gate electrodes are adjusted to have different work function values comprises forming an device region of a first and second conductivity type for forming first and second MOS semiconductor element devices, respectively, in a semiconductor substrate, forming a gate insulator, forming a laminated film comprising a molybdenum film and nitrogen containing film for doping nitrogen into molybdenum, doping nitrogen from the nitrogen containing film into molybdenum, processing the laminated film into gate electrodes of the first and second MOS semiconductor element devices, removing the nitrogen containing film from the gate electrodes of the second MOS semiconductor element device and covering the gate electrode of the first MOS semiconductor element devices with a nitrogen diffusion preventing film, and reducing the nitrogen concentration in molybdenum of the gate electrodes of the second MOS semiconductor element device.
