US Patent 7255772 High pressure processing chamber for semiconductor substrate
Patent 7255772 was granted and assigned to Tokyo Electron on August, 2007 by the United States Patent and Trademark Office.
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A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.
US Patent 07255772 High pressure processing chamber for semiconductor substrate US Patent 7255772 High pressure processing chamber for semiconductor substrate
US Patent 07255772 High pressure processing chamber for semiconductor substrate
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