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US Patent 7256121 Contact resistance reduction by new barrier stack process

Patent 7256121 was granted and assigned to Texas Instruments on August, 2007 by the United States Patent and Trademark Office.

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Patent abstract

The present invention provides a method for forming an interconnect on a semiconductor substrate 100. The method includes forming an opening 230 over an inner surface of the opening 130, the depositing forming a reentrant profile near a top portion of the opening 130. A portion of barrier 230 is etched, which removes at least a portion of the barrier 230 to reduce the reentrant profile. The etching also removes at least a portion of the barrier 230 layer at the bottom of the opening 130.

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