Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 14, 2007
Patent Application Number
11362872
Date Filed
February 28, 2006
Patent Primary Examiner
Patent abstract
A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
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