Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hidehito Kitakado0
Shunpei Yamazaki0
Taketomi Asami0
Yasuyuki Arai0
Date of Patent
August 28, 2007
0Patent Application Number
110231590
Date Filed
December 27, 2004
0Patent Primary Examiner
Patent abstract
A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400° C. or above to recover this damage, hydrogen is re-emitted from the crystalline semiconductor film.
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