Patent attributes
The present invention provides a method of evaluating a semiconductor device having an ESD protective element, wherein a MOSFET is formed on the same substrate, comprising a step (electric characteristic measurement) for measuring an electric characteristic of the MOSFET, a step (snapback characteristic measurement) for measuring a snapback characteristic of the MOSFET, a step (impurity profile extraction) for extracting an impurity profile of the MOSFET from the electric characteristic and snapback characteristic of the MOSFET by using an inverse modeling technique, and a step (impurity profile adaptation) for causing the extracted impurity profile of the MOSFET and an impurity profile of the ESD protective element to correspond to each other, whereby the impurity profile of the ESD protective element is evaluated from the electric characteristic.
