Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 11, 2007
Patent Application Number
10872343
Date Filed
June 18, 2004
Patent Primary Examiner
Patent abstract
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the semi-conductive layer. At least a portion of the semi-conductive layer is doped by implanting through the conductive layer. The semi-conductive layer and the conductive layer may then be annealed.
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