Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 11, 2007
Patent Application Number
11009005
Date Filed
December 13, 2004
Patent Citations Received
Patent Primary Examiner
Patent abstract
A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber; and a second electrode comprising a plurality of separated electrodes which are arranged between the chamber and the first electrode and to each of which high frequency power is applied independently.
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