Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 11, 2007
Patent Application Number
11197070
Date Filed
August 4, 2005
Patent Primary Examiner
Patent abstract
One or more aspects of the present invention relate to forming a dielectric suitable for use as a gate dielectric in a transistor. The gate dielectric is formed by a nitridation process that adds nitrogen to a semiconductor substrate.
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