Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 18, 2007
Patent Application Number
11212400
Date Filed
August 26, 2005
Patent Primary Examiner
Patent abstract
A semiconductor substrate includes a first semiconductor layer that is formed on a semiconductor base substrate, a second semiconductor layer that is formed on the first semiconductor layer and that has an etching selection ratio smaller than that of the first semiconductor layer, a cavity portion that is formed below the second semiconductor layer by removing a portion of the first semiconductor layer, a thermal oxidation film that is formed on the surface of the second semiconductor layer in the cavity portion, and a buried insulating film that is buried in the cavity portion.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
