US Patent 7274998 Near-field photo-lithography using nano light emitting diodes
Patent 7274998 was granted and assigned to Intel on September, 2007 by the United States Patent and Trademark Office.
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Patent abstract
An embodiment of the present invention is a technique to pattern features. An array of nanowires is placed at a distance to a resist layer. The array forms a plurality of light emitting diodes (LEDs). The distance corresponds to a near-field region of the light emitted by the LEDs with respect to the resist layer. A control circuit controls the LEDs to emit the light to pattern a feature in the resist layer.
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US Patent 07274998 Near-field photo-lithography using nano light emitting diodes US Patent 7274998 Near-field photo-lithography using nano light emitting diodes
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Patent Number
0727499800
Patent Number
727499800
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Official Website
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
072749980
Date of Patent
September 25, 2007
0Patent Application Number
112411820
Date Filed
September 30, 2005
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
072749980
Date of Patent
September 25, 2007
0Patent Application Number
112411820
Date Filed
September 30, 2005
0Official Website
Patent Primary Examiner
Edits on 17 Jun, 2022
Golden AI
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US Patent 07274998 Near-field photo-lithography using nano light emitting diodes
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07274998
Date of patent
September 25, 2007
Patent application number
11241182
Date Filed
September 30, 2005
Patent primary examiner
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