US Patent 7276442 Method for forming a metallization layer

Patent 7276442 was granted and assigned to Micron Technology on October, 2007 by the United States Patent and Trademark Office.

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Patent Inventor Names

Chris Chang Yu0

Gurtej Sandhu Sandhu0

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Patent abstract

A method for depositing metal on a semiconductor device having a substrate, an exposed first surface, and an exposed second surface is provided. Metal ions are deposited on the exposed first surface and on the exposed second layer by applying a first voltage between the substrate and an anode in the presence of an electrolytic bath, and metal ions are removed from the exposed first surface by applying a second voltage between the substrate and the anode in the presence of the electrolytic bath. Other aspects and embodiments are provided herein.

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Official Website

https://pdfpiw.uspto.gov/.piw?Docid=07276442

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