US Patent 7276744 Semiconductor device and method of manufacturing the same

This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.