Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tatsuhiko Fujihira0
Yasushi Miyasaka0
Date of Patent
October 2, 2007
Patent Application Number
11473886
Date Filed
June 23, 2006
Patent Primary Examiner
Patent abstract
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
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