Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Earic Liu0
Gene Li0
Yi-Cheng Chen0
Yu-Kun Chen0
Date of Patent
October 9, 2007
0Patent Application Number
110672870
Date Filed
February 25, 2005
0Patent Primary Examiner
Patent abstract
A method for fabricating an asymmetric semiconductor device is provided. A substrate formed with at least one base structure of MOSFET thereon is provided, wherein the base structure includes a gate over the substrate and a source extension and a drain extension in the substrate beside the gate. The base structure is then treated with an anisotropic annealing source inclined in the source-to-drain direction of the base structure relative to the normal of the substrate, such that one of the source and drain extensions is shadowed by the gate and the other is annealed more.
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