US Patent 7279433 Deposition and patterning of boron nitride nanotube ILD
Patent 7279433 was granted and assigned to Freescale Semiconductor on October, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Kurt Junker0
Marius Orlowski0
Peter L. G. Ventzek0
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Patent abstract
A method for forming a dielectric layer is disclosed herein. In accordance with the method, a first material is provided (303) which comprises a suspension of nanoparticles in a liquid medium. A dielectric layer is then formed (305) on the substrate from the suspension through an evaporative process.
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US Patent 07279433 Deposition and patterning of boron nitride nanotube ILD US Patent 7279433 Deposition and patterning of boron nitride nanotube ILD
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Patent Number
072794330
Patent Number
72794330
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Current Assignee
Patent Jurisdiction
Patent Number
072794330
Date of Patent
October 9, 2007
0Patent Application Number
109453190
Date Filed
September 20, 2004
0Official Website
Patent Primary Examiner
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US Patent 07279433 Deposition and patterning of boron nitride nanotube ILD
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07279433
Date of patent
October 9, 2007
Patent application number
10945319
Date Filed
September 20, 2004
Patent primary examiner
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