US Patent 7279738 Semiconductor device with an analog capacitor
Patent 7279738 was granted and assigned to Texas Instruments on October, 2007 by the United States Patent and Trademark Office.
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A method for manufacturing a semiconductor device that comprises forming an oxide layer over a substrate. A polysilicon layer is disposed outwardly from the oxide layer, wherein the polysilicon layer forms a floating gate. A PSG layer is disposed outwardly from the polysilicon layer and planarized. The device is pattern etched to form a capacitor channel, wherein the capacitor channel is disposed substantially above the floating gate formed from the polysilicon layer. A dielectric layer is formed in the capacitor channel disposed outwardly from the polysilicon layer. A tungsten plug operable to substantially fill the capacitor channel is formed.
US Patent 07279738 Semiconductor device with an analog capacitor US Patent 7279738 Semiconductor device with an analog capacitor
US Patent 07279738 Semiconductor device with an analog capacitor
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