Patent attributes
An infrared sensor of this invention is characterized by including a support member including a support film and a substrate that supports the support film, a polysilicon film which ranges from above a concavity to above the substrate, SiO2 which is formed on the polysilicon film and has a first junction hole above the concavity and a second junction hole above the substrate, an aluminum film which is connected to the polysilicon film through the first junction hole and connected to an adjacent polysilicon film through the second junction hole, and a heat absorption layer formed above the concavity to cover a portion above the first junction hole, wherein the aluminum film is stacked on the corresponding polysilicon film via the SiO2 above the concavity.
