Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mizue Kitada0
Shinji Kunori0
Hiroaki Shishido0
Kosuke Ohshima0
Masahiro Kuriyama0
Masato Mikawa0
Date of Patent
October 16, 2007
Patent Application Number
11481247
Date Filed
July 6, 2006
Patent Primary Examiner
Patent abstract
A semiconductor device having high ruggedness is provided. The distance Wm2 between buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set smaller than the distance Wm1 between buried regions positioned at the bottom of the same base diffusion region (Wm1>Wm2). An avalanche breakdown occurs under the bottom of the base diffusion region, and the avalanche current is not passed through a high resistance part immediately under the source diffusion region in the base diffusion region, thereby providing high withstand strength against destruction.
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