Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Steven H. Voldman0
Date of Patent
October 16, 2007
0Patent Application Number
109058780
Date Filed
January 25, 2005
0Patent Primary Examiner
Patent abstract
A method and structure for an integrated circuit comprising a substrate of a first polarity, a merged triple well region of a second polarity and a doped region of the second polarity abutting the well region. The doped region is adapted to suppress latch-up in the integrated circuit. The doped region is placed under semiconductor devices of the first polarity and under the well region contact region. Additionally, the structure may further include a deep trench (DT) structure and trench isolation (TI) structure to further improve latchup robustness.
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