Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 23, 2007
Patent Application Number
11256597
Date Filed
October 21, 2005
Patent Primary Examiner
Patent abstract
A semiconductor device manufacturing method is provided in which, in the dummy gate pattern formation process, the pattern formation process is simplified and costs are reduced. A semiconductor device manufacturing method including: forming a mask element on a substrate; patterning the mask element into a prescribed shape, and forming a depression in the mask element; placing a functional liquid in the depression; drying the functional liquid placed in the depression so as to form a functional film; annealing the functional film; and, removing the mask element so as to form a dummy gate pattern of a residue of the functional liquid.
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