US Patent 7285835 Low power magnetoelectronic device structures utilizing enhanced permeability materials
Patent 7285835 was granted and assigned to Freescale Semiconductor on October, 2007 by the United States Patent and Trademark Office.
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Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.
US Patent 07285835 Low power magnetoelectronic device structures utilizing enhanced permeability materials US Patent 7285835 Low power magnetoelectronic device structures utilizing enhanced permeability materials
US Patent 07285835 Low power magnetoelectronic device structures utilizing enhanced permeability materials
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