Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 30, 2007
Patent Application Number
10999338
Date Filed
November 29, 2004
Patent Primary Examiner
Patent abstract
There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.
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