Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 30, 2007
Patent Application Number
11360287
Date Filed
February 22, 2006
Patent Primary Examiner
Patent abstract
According to a semiconductor device of an embodiment of the present invention, a P-type buried diffusion layer is formed across a substrate and an epitaxial layer. An N-type buried diffusion layer is formed in the P-type buried diffusion layer. An overvoltage protective PN junction region is formed below an element formation region. A breakdown voltage of the PN junction region is lower than a source-drain breakdown voltage. This structure prevents a breakdown current from concentratedly flowing into the PN junction region and protects the semiconductor device from overvoltage.
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