Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 6, 2007
Patent Application Number
10931887
Date Filed
August 31, 2004
Patent Primary Examiner
Patent abstract
In accordance with an embodiment of the present invention, a MOSFET includes at least two insulation-filled trench regions laterally spaced in a first semiconductor region to form a drift region therebetween, and at least one resistive element located along an outer periphery of each of the two insulation-filled trench regions. A ratio of a width of each of the insulation-filled trench regions to a width of the drift region is adjusted so that an output capacitance of the MOSFET is minimized.
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