Patent 7294198 was granted and assigned to Japan Atomic Energy Research Institute on November, 2007 by the United States Patent and Trademark Office.
A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. and then slowly cooling the obtained gallium nitride melt at the stated high pressure.