US Patent 7294324 Low basal plane dislocation bulk grown SiC wafers
Patent 7294324 was granted and assigned to Wolfspeed on November, 2007 by the United States Patent and Trademark Office.
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Patent abstract
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm−2 for a 4 degree off-axis wafer.
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US Patent 07294324 Low basal plane dislocation bulk grown SiC wafers US Patent 7294324 Low basal plane dislocation bulk grown SiC wafers
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Patent Number
0729432400
Patent Number
729432400
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
072943240
Date of Patent
November 13, 2007
0Patent Application Number
111476450
Date Filed
June 8, 2005
0Official Website
Patent Primary Examiner
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
072943240
Date of Patent
November 13, 2007
0Patent Application Number
111476450
Date Filed
June 8, 2005
0Official Website
Patent Primary Examiner
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US Patent 07294324 Low basal plane dislocation bulk grown SiC wafers
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07294324
Date of patent
November 13, 2007
Patent application number
11147645
Date Filed
June 8, 2005
Patent primary examiner
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