US Patent 7297578 Method for producing a field effect transistor
All edits
Edits on 16 Sep, 2023
Golden AI
Edits made to:
Infobox (+3 properties)
Infobox
Patent Inventor Names
Joël Hartmann0
Philippe Coronel0
Thomas Skotnicki0
Edits on 1 Sep, 2023
Golden AI
Edits made to:
Article (+437 characters)
Article
Patent abstract
A field effect transistor is produced on a substrate. A semiconductor material is deposited on a portion of a single crystal temporary material. At least part of the temporary material is removed. A portion of a conducting material is then formed above and beneath the portion of semiconductor material. A layer of an electrically insulating material is located between the portion of temporary material and the substrate.
Edits on 20 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 07297578 Method for producing a field effect transistor US Patent 7297578 Method for producing a field effect transistor
Infobox
Patent Number
07297578
Patent Number
7297578
Edits on 19 May, 2023
Golden AI
Edits made to:
Infobox (-1 properties)
Infobox
Official Website
Edits on 17 Jun, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Website URL
Edits on 23 Nov, 2021
Golden AI
Edits made to:
Infobox (+7 properties)
US Patent 07297578 Method for producing a field effect transistor
Infobox
Is a
Patent jurisdiction
Patent number
07297578
Date of patent
November 20, 2007
Patent application number
10943242
Date Filed
September 16, 2004
Patent primary examiner
Find more entities like US Patent 7297578 Method for producing a field effect transistor
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
