Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Junichiro Kobayashi0
Date of Patent
November 20, 2007
Patent Application Number
11179404
Date Filed
July 12, 2005
Patent Primary Examiner
Patent abstract
A bipolar transistor having a base electrode of an air bridge structure is simplified in structure and enhanced in the degree of freedom of a contact position of a base wiring line with the base electrode. The bipolar transistor has a semiconductor mesa portion having a base layer formed on an upper face thereof, and a base electrode contacts with the base layer and has a floating extension which extends from the semiconductor mesa portion to a space on the outer side with respect to the semiconductor mesa portion. The floating extension is used as a contact portion for a base wiring line to the base electrode.
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