US Patent 7298020 Semiconductor device and method of manufacturing the same

Patent 7298020 was granted and assigned to Denso on November, 2007 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

All edits

Edits on 16 Sep, 2023

"Add patent inventor(s)"

Golden AI

edited on 16 Sep, 2023

Edits made to:

Infobox (+3 properties)

Infobox

Patent Inventor Names

Koji Eguchi0

Syuji Asano0

Yoshiaki Nakayama0

Edits on 1 Sep, 2023

"Add patent abstract"

Golden AI

edited on 1 Sep, 2023

Edits made to:

Article (+601 characters)

Article

Patent abstract

A wire (12) is formed on an insulating film (10) on a semiconductor substrate (1). The wire (12) is covered by silicon nitride film (14), inorganic SOG film (20) and TEOS film (21). A thin film resistance element (30) of chromium silicon (CrSi) is formed on the upper surface of the TEOS film (21). The acute angle (taper angle) at which a line connecting the local maximum and minimum points of a step on the upper surface of the TEOS film (21) beneath the area where the thin film resistance element (30) is formed intersects to the surface of the substrate (1) is set to 10° or less.

Edits on 16 Jul, 2023

"Remove leading 0 from patent number"

Golden AI

edited on 16 Jul, 2023

Edits made to:

Infobox (+1/-1 properties)

‌