Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masataka Hourai0
Wataru Sugimura0
Date of Patent
November 27, 2007
Patent Application Number
11194470
Date Filed
August 2, 2005
Patent Primary Examiner
Patent abstract
A manufacturing method of a hydrogen-doped silicon single crystal. A silicon single crystal is grown under an inert atmosphere containing hydrogen in a CZ pulling furnace comprising a pull chamber connected to a main chamber. At least one portion of a mixed gas composed of a hydrogen gas and an inert gas to be introduced into the CZ pulling furnace is supplied directly to a surface of a silicon melt in the main chamber, preferably to adjacent parts to a solid-liquid interface of the surface thereof, or in the silicon melt.
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